Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates. (15th January 2017)

• Record Type: Journal Article
• Authors: Arroyo Rojas Dasilva, Yadira; Rossell, Marta D.; Isa, Fabio; Erni, Rolf; Isella, Giovanni; Känel, Hans von; Gröning, Pierangelo
• Is Part Of: Scripta materialia. Volume 127(2017)
• Page Start: 169
• Page End: 172
• Publication Date: 2017-01-15
• Subjects: Dislocations -- Stacking Faults -- Twins -- HAADF-STEM -- Ge; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2016.09.003
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: In this paper we report on the defects formed in Ge crystals grown on Si(001) pillars upon strain relaxation. The analysis is performed by high-angle annular dark-field scanning transmission electron microscopy. The strain relaxation happens by means of 60° and 90° misfit dislocations with Burgers vectors b → = 1 2 ⟨ 110 ⟩ . Misfit dislocations may split forming partial dislocations with Burgers vectors b → = 1 6 ⟨ 112 ⟩, and are separated by a stacking fault. Besides, intrinsic stacking faults in different {111} planes interact and annihilate each other forming stair rod dislocations. Coherent and incoherent twin boundaries of the Σ 3{111} and Σ 3{112} types are also found in the Ge. Graphical Abstract: