Photon management of GaN-based optoelectronic devices via nanoscaled phenomena. (September 2016)

• Record Type: Journal Article
• Authors: Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau
• Is Part Of: Progress in quantum electronics. Volume 49(2016:Sep.)
• Page Start: 1
• Page End: 25
• Publication Date: 2016-09
• Subjects: Quantum electronics -- Periodicals; Électronique quantique -- Périodiques; 537.5
• DOI: 10.1016/j.pquantelec.2016.08.001
• Languages: English
• ISSNs: 0079-6727

Abstract

Abstract: Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells.