Cite
HARVARD Citation
Divay, A. et al. (2016). Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectronics and reliability. pp. 585-588. [Online].
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Divay, A. et al. (2016). Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectronics and reliability. pp. 585-588. [Online].