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HARVARD Citation
Landel, M. et al. (2016). [131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. Microelectronics and reliability. pp. 560-565. [Online].
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Landel, M. et al. (2016). [131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. Microelectronics and reliability. pp. 560-565. [Online].