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HARVARD Citation
Lakhdhar, H. et al. (2016). Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectronics and reliability. pp. 594-598. [Online].
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Lakhdhar, H. et al. (2016). Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectronics and reliability. pp. 594-598. [Online].