Thermally Induced Crystallization of TiBx Thin Film after Deposition by Dual Beam IBAD Method. (2016)

• Record Type: Journal Article
• Authors: Twardowska, A.; Morgiel, J.; Rajchel, B.
• Is Part Of: Materials today. Volume 3:Number 8(2016)
• Page Start: 2646
• Page End: 2651
• Publication Date: 2016
• Subjects: TiB2 -- Thin Film -- DB IBAD -- TEM -- Crystallization; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2016.06.008
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: Thin TiBx film was formed on Si (100) substrate by dual beam ion assisted deposition method using two Ar + ion beams of the same energy at 15 keV and TiB2 target. The microstructure of the film was examined using transmission electron microscopy methods in as - deposited state and during in - situ post - deposition heat treatment conducted at 20 - 550°C temperature range. The crystallization of TiBx film starts at 550 °C and short isothermal heating at that temperature allows to obtain crystalline/amorphous nanocomposite. In the TiBx thin film nanocrystallites of TiB and TiB2 phases were identified. Post-deposition heat treatment induced also crystallization in thin amorphous subsurface layer of Si substrate, formed during deposition by intensive bombardment of assistant beam of Ar + ions.