Effects of Xe+ irradiation on Ti3SiC2 at RT and 500 °C. Issue 2 (February 2017)

• Record Type: Journal Article
• Authors: Shen, H.H.; Li, F.Z.; Zhang, H.B.; Peng, S.M.; Zu, X.T.; Sun, K.
• Is Part Of: Journal of the European Ceramic Society. Volume 37:Issue 2(2017)
• Page Start: 855
• Page End: 858
• Publication Date: 2017-02
• Subjects: MAX -- Ti3SiC2 -- Radiation damage -- TiC -- Nano-grain; Ceramic materials -- Periodicals; Composite materials -- Periodicals; Matériaux céramiques -- Périodiques; Composites -- Périodiques; Ceramic materials; Composite materials; Periodicals; Electronic journals; 666.05
• DOI: 10.1016/j.jeurceramsoc.2016.08.026
• Languages: English
• ISSNs: 0955-2219

Abstract

Abstract: In this study, effects of a 400 keV Xe + irradiation on Ti3 SiC2 were systematically investigated by transmission electron microscopy (TEM). At RT, results show that the Xe + irradiation induced the dissociation of Ti3 SiC2 to polycrystalline TiC first, and then the polycrystalline to TiC nanograins with the increasing fluence. However, there is no significant microstructure change observed on the sample irradiated at 500 °C. It is demonstrated that Ti3 SiC2 had not been completely amorpherized even up to 116.9 displacements per atom (dpa).