Boron-Oxygen Defect Formation Rates and Activity at Elevated Temperatures. (August 2016)

• Record Type: Journal Article
• Authors: Hamer, Phillip; Nampalli, Nitin; Hameiri, Ziv; Kim, Moonyong; Chen, Daniel; Gorman, Nicholas; Hallam, Brett; Abbott, Malcolm; Wenham, Stuart
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 791
• Page End: 800
• Publication Date: 2016-08
• Subjects: Boron-oxygen -- Degradation -- Passivation -- Defect Kinetics -- Crystalline silicon; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.070
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: In this work the dependence of the slow boron-oxygen defect formation rate on excess carrier density is examined in p-type Cz silicon. In order to examine behavior at elevated temperatures simple models are developed to simulate the injection-level dependent lifetime of samples at a range of temperatures and active defect concentrations. These models are then verified against experimental data. Based on these models it is possible to clearly observe a quadratic dependence of defect formation rate upon total hole concentration over a range of temperatures. The implications of a hole (and hence excess carrier (Δ n )) dependent defect formation rate, combined with the temperature dependence of defect activity are then discussed. It is demonstrated how a dependence of formation rate upon hole concentration increases the rate of defect formation and mitigation of carrier-induced degradation in samples with reduced saturation current density during anneals at elevated temperatures and illumination intensities.