Boron Emitter Formation by Plasma Immersion Ion Implantation in n-type PERT Silicon Solar Cells. (August 2016)

• Record Type: Journal Article
• Authors: Lerat, Jean-François; Desrues, Thibaut; Le Perchec, Jérôme; Coig, Marianne; Milesi, Frederic; Mazen, Frédéric; Michel, Thomas; Roux, Laurent; Veschetti, Yannick; Dubois, Sébastien
• Is Part Of: Energy procedia. Volume 92(2016)
• Page Start: 697
• Page End: 701
• Publication Date: 2016-08
• Subjects: n-type silicon -- plasma immersion -- ion implantation -- thermal annealing -- doping -- boron emitter -- phosphorus BSF -- PERT -- solar cells; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2016.07.046
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: The use of plasma immersion ion implantation (PIII) is a relevant approach for the development of advanced solar cells technologies at lower cost (€/Wp ). In this paper, we report on the development of homogeneous boron (B) doping of n-type crystalline silicon (cSi) substrate by the PIII technique. Using diborane (B2 H6 ) as gas precursor, various doping profiles were identified fitting the requirements for boron-doped emitters in n-type PERT solar cells. Particularly, saturation current density (J0e ) of 50 fA/cm 2 were achieved on symmetrical samples for a 94 Ω/sg textured B-emitter passivated with SiO2 /SiN stack. Bifacial n-type Passivated Emitter Rear Totally-diffused (n-PERT) solar cells were fabricated using the PIII technology and conversion efficiencies up to 19.8% on 239 cm 2 Cz-Si wafers were obtained. As a consequence, these results indicate that PIII can compete with beamline technology but will have lower running cost. It is therefore a promising technology to create high efficiency cSi solar cells.