Cite
HARVARD Citation
Meneghesso, G. et al. (2016). Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectronics and reliability. pp. 151-157. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Meneghesso, G. et al. (2016). Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectronics and reliability. pp. 151-157. [Online].