80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS. Issue 4 (28th March 2016)

• Record Type: Journal Article
• Authors: Yang, Xin; Xu, Xiao; Shibata, Takayuki; Yoshimasu, Toshihiko
• Editors: Barataud, Denis; Tournier, Éric; Lalande, Michèle
• Is Part Of: International journal of microwave and wireless technologies. Volume 8:Issue 4/5(2016)
• Page Start: 703
• Page End: 712
• Publication Date: 2016-03-28
• Subjects: W-band, -- 130-nm SiGe BiCMOS, -- Sub-harmonic mixer, -- CECCTP, -- Bottom-LO-configuratoin, -- Marchand Balun, -- Low power; Wireless communication systems -- Periodicals; Microwave circuits -- Periodicals; Radio frequency -- Periodicals; 621.381305
• DOI: 10.1017/S1759078716000337
• Languages: English
• ISSNs: 1759-0787

Abstract

Abstract : In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.