A comprehensive analysis of nanoscale single- and multi-gate MOSFETs. (June 2016)

• Record Type: Journal Article
• Authors: Sharma, Rupendra Kumar; Dimitriadis, Charalabos A.; Bucher, Matthias
• Is Part Of: Microelectronics journal. Volume 52(2016)
• Page Start: 66
• Page End: 72
• Publication Date: 2016-06
• Subjects: Multi-gate MOSFETs -- Analog/RF performance -- Linearity -- ATLAS device simulator; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2016.03.004
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: Analog/RF performance of nanoscale triple gate FinFETs and planar single-gate (SG) and double-gate (DG) SOI MOSFETs is examined via extensive 3D device simulations. Well-designed DG MOSFETs attain higher values of cut-off frequency for both lower and higher drain currents, whereas triple-gate (TG) FinFETs offer higher intrinsic gain while compromising cut-off frequency. For longer channel lengths, SG MOSFETs show slightly higher cut-off frequency in comparison to multi-gate (MG) MOSFETs, whereas MG MOSFETs exhibit higher cut-off frequency for lower channel lengths. A unique figure of merit, gain transconductance frequency product (GTFP) for best trade-off among gain, transconductance, and speed is compared. Double-gate MOSFETs exhibit higher GTFP over a wide range of device scaling, thus remain a good candidate for analog/RF applications. Furthermore, the RF linearity performance of these devices has been examined.