Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films. (5th September 2016)
- Record Type:
- Journal Article
- Title:
- Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films. (5th September 2016)
- Main Title:
- Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films
- Authors:
- Prusakova, Valentina
Collini, Cristian
Lunelli, Lorenzo
Vanzetti, Lia
Chiappini, Andrea
Lorenzelli, Leandro
Pederzolli, Cecilia
Chiasera, Alessandro
Ferrari, Maurizio
Dirè, Sandra - Abstract:
- Abstract: Herein, we report a memristive response from Pt/TiO2 /Ta2 O5 /Pt stack thin films with low SET and RESET voltages, and resistance ratio of 10 3 . For the first time, Pt/TiO2 /Ta2 O5 stack thin films were produced by sol-gel procedure. The morphology and elemental composition of Pt/TiO2 /Ta2 O5 stacks were studied by a set of complementary techniques, including scanning electron microscopy (SEM), field-emission electron microscopy (FE-SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of the material was estimated from the transmittance spectrum by Pointwise Unconstrained Optimization Approach (PUMA). Graphical abstract: Highlights: Pt/TiO2 /Ta2 O5 stacks as memristive building blocks were fabricated by the sol-gel method for the first time. The developed sol-gel route towards Ta2 O5 film fabrication relies on relatively inexpensive TaCl5 precursor. The fabricated defect-free Pt/TiO2 /Ta2 O5 stacks represent suitable building blocks for memristor cell fabrication. The memristive cells, Pt/TiO2 /Ta2 O5 /Pt (tip), displayed a narrow switching voltage window and a high resistance ratio (10 3 ). The narrow window of the switching voltage in memristor opens a possibility of coupling it to neuron.
- Is Part Of:
- Materials & design. Volume 105(2016)
- Journal:
- Materials & design
- Issue:
- Volume 105(2016)
- Issue Display:
- Volume 105, Issue 2016 (2016)
- Year:
- 2016
- Volume:
- 105
- Issue:
- 2016
- Issue Sort Value:
- 2016-0105-2016-0000
- Page Start:
- 359
- Page End:
- 365
- Publication Date:
- 2016-09-05
- Subjects:
- Memristive response -- Tantalum pentoxide -- Titanium dioxide -- Sol-gel -- Thin films
Materials -- Periodicals
Engineering design -- Periodicals
Matériaux -- Périodiques
Conception technique -- Périodiques
Electronic journals
620.11 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/9062775.html ↗
http://www.sciencedirect.com/science/journal/02641275 ↗
http://www.sciencedirect.com/science/journal/02613069 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.matdes.2016.05.086 ↗
- Languages:
- English
- ISSNs:
- 0264-1275
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5393.974000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 257.xml