Enhanced electrical properties and field emission characteristics of AZO/ZnO-nanowire core–shell structures. Issue 22 (23rd May 2016)

• Record Type: Journal Article
• Authors: Huang, Jheng-Ming; Tsai, Shang-You; Ku, Ching-Shun; Lin, Chih-Ming; Chen, San-Yuan; Lee, Hsin-Yi
• Is Part Of: Physical chemistry chemical physics. Volume 18:Issue 22(2016)
• Page Start: 15251
• Page End: 15259
• Publication Date: 2016-05-23
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c6cp01011c
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : The electrical properties and field-emission characteristics of AZO/ZnO nanowires fabricated using a novel method of atomic layer deposition were systematically investigated. Abstract : The electrical properties and field-emission characteristics of ZnO nanowires (ZnO-NWs) fabricated using a vapor–liquid–solid method were systematically investigated. In particular, we explored the effects of Al-doped ZnO (AZO) films (thickness 4–100 nm) deposited on ZnO-NWs using an atomic layer deposition (ALD) method on the optoelectronic properties. The results show that the sheet resistance of net-like ZnO-NW structures can be significantly improved, specifically to become ∼1/1000 of the sheet resistance of the as-grown ZnO-NWs, attaining less than 10 Ω Sq −1 . The emission current density measured at the maximum field was roughly quadrupled relative to that of the as-grown ZnO-NWs. The data of the enhanced field-emission characteristics show that, with the ALD system, the AZO films of small resistance are readily coated on a structure with a high aspect ratio and the coating radius is controlled relative to the turn-on voltage and current density. The ultrathin AZO film from a one-monolayer coating process also significantly improved emission properties through modification of the effective work function at the AZO/ZnO-NW surface.