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HARVARD Citation
Kim, Y. et al. (2016). Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer. Materials research bulletin. pp. 35-38. [Online].
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Kim, Y. et al. (2016). Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer. Materials research bulletin. pp. 35-38. [Online].