Improvement of the short channel effect in PMOSFETs using cold implantation. (October 2016)

• Record Type: Journal Article
• Authors: Lee, Suk Hun; Park, Se Geun; Jeong, Seong Hoon; Jung, Hyuck-Chai; Kim, Il Gweon; Kang, Dong-Ho; Nam, Hyo-Jik; Kim, Dae Jung; Lee, Kyu Pil; Choi, Joo Sun; Jung, Woosuk; Park, Yongkook; Choi, Changhwan; Park, Jin-Hong
• Is Part Of: Materials research bulletin. Volume 82(2016)
• Page Start: 31
• Page End: 34
• Publication Date: 2016-10
• Subjects: A. Semiconductor -- A. Electronic materials -- D. Diffusion -- D. Defect -- D. Electrical properties; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2016.02.027
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: The effect of cold-implantation was investigated in terms of dopant diffusion. VTH roll-off, Ioff increment, and contact resistance was improved by cold-IIP. The standby current at a short tPD was reduced effectively for the cold-IIP case. Abstract: In this paper, to suppress transient enhanced dopant diffusion and improve short channel effects, cold implantation (cold-IIP) was applied to contact PLUG implantation in P-channel metal oxide semiconductor field effect transistors (PMOSFETs). A shallow dopant profile was formed by the suppression of transient enhanced diffusion (TED) due to the reduction of end-of-range (EOR) defects. Threshold voltage roll-off and off current (Ioff ) increment, which are caused by a reduction in the distance between the gate and contact, were improved compared with room temperature implantation (RT-IIP). Additionally, the drain induced barrier lowering was improved, and the on-current improvement was attributed to reducing the contact resistance through the reduction of EOR defects. The contact resistance was reduced by ∼6% of the RT-IIP. In the DRAM device, the standby current at a short propagation delay time (tPD ) was reduced effectively due to the decrease in the Ioff and contact resistance for the cold-IIP case.