Synthesis of a Family of ([SnSe]1+δ)m­([{MoxNb1x}Se2]1+γ)1([SnSe]1+δ)m­({Nbx­Mo1–x}Se2)1 Superlattice ­Heterostructures (m = 0, 1, 2, 3, 4 ­and 0.8 ≤ x ≤ 1). Issue 8 (16th February 2016)

• Record Type: Journal Article
• Authors: Westover, Richard D.; Mitchson, Gavin; Ditto, Jeffrey J.; Johnson, David C.
• Is Part Of: European journal of inorganic chemistry. Issue 8(2016)
• Page Start: 1225
• Page End: 1231
• Publication Date: 2016-02-16
• Subjects: Ferecrystals -- Interfaces -- Superlattices -- Thin films -- Self‐assembly; Chemistry, Inorganic -- Periodicals; Organometallic chemistry -- Periodicals; Bioinorganic chemistry -- Periodicals; Solid state chemistry -- Periodicals; 546
• DOI: 10.1002/ejic.201501324
• Languages: English
• ISSNs: 1434-1948

Abstract

Abstract: A family of multiple‐component heterostructures, ([SnSe]1+ δ ) m ([{Mo x Nb1– x }Se2 ]1+ γ )1 ([SnSe]1+ δ ) m ({Nb x Mo1– x }Se2 )1 ( m = 0, 1, 2, 3, 4 and 0.8 ≤ x ≤ 1), was self‐assembled from designed amorphous precursors, and their structure and physical properties were characterized. The compounds consist of MoSe2 and NbSe2 layers with metal centers in a trigonal‐prismatic environment interleaved with systematically increasing numbers of SnSe bilayers with a distorted rock salt structure. The extent of alloying of the miscible dichalcogenide constituents decreased from about 20 % for m = 0 to less than 1 % for m = 3 and 4. The decreased alloying with increased SnSe thickness suggests the diffusion lengths of Mo and Nb during self‐assembly are about a nanometer. Resistivity and Hall coefficient measurements show that the electrical transport properties are similar to those of ([SnSe]1+ δ ) m (NbSe2 )1 ( m = 1–8) compounds, suggesting that the NbSe2 layer dominates the conductivity and that charge transfer from SnSe reduces the carrier concentration in the NbSe2 layer. Abstract : A family of heterostructures, consisting of MoSe2 and NbSe2 layers interleaved with systematically increasing numbers of SnSe bilayers, self‐assembled from designed amorphous precursors. Decreased alloying with increasing thickness of the interleaving SnSe layers suggests the diffusion lengths of Mo and Nb during self‐assembly are about a nanometer.