Cite
HARVARD Citation
Lichtenwalner, D. et al. (2014). Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC. MRS proceedings. p. . [Online].
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Lichtenwalner, D. et al. (2014). Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC. MRS proceedings. p. . [Online].