Analysis of Si-SiO2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO2. Issue 1770 (2015)

• Record Type: Journal Article
• Authors: Wang, Ying; Chahal, Monica D.; Wang, J. J.; Limanov, A. B.; Chitu, A. M.; Im, James S.
• Editors: Hekmatshoar, B.; Collins, R.; Holman, Z.; Stradins, P.; Terakawa, A.
• Is Part Of: MRS proceedings. Issue 1770(2015)
• Page Start: 55
• Page End: 60
• Publication Date: 2015
• Subjects: Si, -- laser annealing, -- thin film; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.823
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: We have experimentally investigated the anisotropy of Si-SiO2 interfacial energy by leveraging the mixed-phase solidification (MPS) method. By examining the microstructure evolution resulting from partial-melting-and-solidification cycles, and interpreting the changes in the surface-orientation distribution of the grains in terms of the thermodynamic model, we have identified the orientation-dependent hierarchical order of Si-SiO2 interfacial energies, σ{hkl}, as: σ{100} < σ{310} < σ{113} < σ{112} < σ{221} < σ{210} ∼σ{331} < σ{111}, σ{110} .