Laser Terahertz Emission Spectroscopy of Graphene/InAs Junctions. Issue 1808 (2015)

• Record Type: Journal Article
• Authors: Bagsican, Filchito Renee; Gonzales, Jofferson; Zhang, Xiang; Ma, Lulu; Kawayama, Iwao; Murakami, Hironaru; Vajtai, Robert; Ajayan, Pulickel; Kono, Junichiro; Tonouchi, Masayoshi
• Editors: Prasankumar, R.; Davis, J.; Johnston, M.
• Is Part Of: MRS proceedings. Issue 1808(2015)
• Page Start: 1
• Page End: 7
• Publication Date: 2015
• Subjects: chemical vapor deposition (CVD) (deposition), -- adsorption, -- III-V; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.639
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: We applied laser THz emission spectroscopy to study the effects of monolayer graphene on the THz emission from InAs. THz emission from graphene/InAs varies linearly with the laser excitation power in the low-intensity excitation regime. We found that unlike in graphene/SI-InP junctions, graphene and O2 adsorbates on graphene have no significant effect on the THz emission from graphene/InAs junctions because the THz radiation mechanism in InAs is by the photo-Dember effect, whereas for SI-InP is by the surge current effect. There is also a slight enhancement in the THz emission from both bare InAs and graphene/InAs by UV illumination, which is probably due to the additional photoexcited carriers by UV that somehow enhances the photo-Dember field.