Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering. Issue 1792 (11th June 2015)

• Record Type: Journal Article
• Authors: Gan, Jiantuo; Galeckas, Augustinas; Venkatachalapathy, Vishnukanthan; Riise, Heine N.; Svensson, Bengt G.; Monakhov, Edouard V.
• Editors: Herrick, R.; Miyake, H.; Palacios, T.; Shiojima, K.; Ueda, O.; Chen, Y.; Liliental-Weber, Z.; Narayan, J.; Weber, E.R.
• Is Part Of: MRS proceedings. Issue 1792(2015)
• Publication Date: 2015-06-11
• Subjects: thin film, -- optical, -- photovoltaic; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.596
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Cux O thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt >170 W, with most pronounced excitonic features being observed in the film grown using Pt =190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.