Electrical Characteristics of RF Sputtered ZnO/HfO2 Interfaces in Transparent Thin Film Transistors. Issue 1792 (24th June 2015)

• Record Type: Journal Article
• Authors: Thapaliya, Prem; Lu, Wenchao; Jha, Rashmi
• Editors: Herrick, R.; Miyake, H.; Palacios, T.; Shiojima, K.; Ueda, O.; Chen, Y.; Liliental-Weber, Z.; Narayan, J.; Weber, E.R.
• Is Part Of: MRS proceedings. Issue 1792(2015)
• Publication Date: 2015-06-24
• Subjects: defects, -- sputtering, -- transparent conductor; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.648
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: In this work, we have reported the interface characterization of rf sputtered ZnO/HfO2 in thin film transistor structure by dc current-voltage and admittance spectroscopy. The interface state density (Dit ) of 10 13 eV −1 cm −2 was extracted from the Gp /ω vs ω plot was comparable to value obtained from the subthreshold behavior. The grain boundary trap density (NGB ) of 9.12×10 12 cm −2 was estimated using Levinson's model. The interface state density distribution below the conduction band edge shows a decreasing trend with energy below the conduction band edge. We also studied the impact of introducing MgO interfacial layer between ZnO and HfO2 interface as an approach towards decreasing the interface state density.