Evolution of Structural and Optical Properties on PIN and NIP pm-Si:H Devices During 400 Hrs of Light-Soaking. Issue 1792 (16th June 2015)

• Record Type: Journal Article
• Authors: Hamui, Leon; Roca i Cabarrocas, Pere; Santana, Guillermo
• Editors: Herrick, R.; Miyake, H.; Palacios, T.; Shiojima, K.; Ueda, O.; Chen, Y.; Liliental-Weber, Z.; Narayan, J.; Weber, E.R.
• Is Part Of: MRS proceedings. Issue 1792(2015)
• Publication Date: 2015-06-16
• Subjects: Raman spectroscopy, -- radiation effects, -- Si; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.613
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Pm-Si:H PIN and NIP solar cells structures grown using plasma enhanced chemical vapor deposition (PECVD) technique were analyzed during 400 hrs of light-soaking exposition. The evolution of the structural and optical properties was observed and characterized by Raman spectroscopy, spectroscopic ellipsometry. The effect observed is related to defects creation due to induced hydrogen diffusion, break of Si-H bonds and the generation of dangling bonds that causes less passivated films. The film microstructure, and therefore the optical properties varied with the exposition time. The crystalline fraction of these structures presents a slight decrease and it is observed to be between 15 to 24% for the PIN and 5 to 10% for the NIP. The optical gap increases from 1.66 to 1.68 eV for the PIN structure while for the NIP no significant change is observed during light-soaking. Hydrogen diffusion during lights soaking generates a decrease on the absorption properties of the films which in turn is expected to reduce the device efficiency during operation. In this work we show that long range motion of hydrogen during light-soaking causes a hydrogen rearrangement on the film and microstructure changes. We determined that there is not an pronounced change on the film structure during prolonged light exposition related to the stability of the pm-Si:H films. The PIN structure properties are more affected during light soaking in comparison to the NIP structure which is expected to cause less degradation of its optoelectronic properties under illumination, and a more stable device during operation.