Selectively Nucleated Lateral Crystallization for a Large Single-Grained Pb(Zr, Ti)O3 on Polycrystalline-Silicon Thin-Film Transistors for System-On-Glass Applications. Issue 1792 (16th June 2015)

• Record Type: Journal Article
• Authors: Park, Jae Hyo; Joo, Seung Ki
• Editors: Herrick, R.; Miyake, H.; Palacios, T.; Shiojima, K.; Ueda, O.; Chen, Y.; Liliental-Weber, Z.; Narayan, J.; Weber, E.R.
• Is Part Of: MRS proceedings. Issue 1792(2015)
• Publication Date: 2015-06-16
• Subjects: thin film, -- ferroelectric, -- grain boundaries; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.610
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: A single-grained Pb(Zr, Ti)O3 (PZT) was successfully grown for the gate dielectric of polycrystalline-silicon (poly-Si) thin-film transistor (TFT). The total structure was MoW/PZT/HfO2 /poly-Si/glass. The giant single-grained PZT was obtained by controlling the artificial nucleation formed by Pt dots in a desirable location and enlarging the nucleated seed until it covers the poly-Si channel. The single-grained diameter size was 40 μm with a (100) dominated texture. The poly-Si memory device with single-grained PZT showed an excellent ferroelectric, electrical and reliability properties comparing with poly-Si memory device with poly-grained PZT. Moreover, eliminating the grain boundary in PZT film showed the fatigue and retention characteristics with only 1.1 % after 10 13 cycles and 22 % after 1 month, respectively.