Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials. Issue 1791 (2015)

• Record Type: Journal Article
• Authors: Klepper, Karina B.; Miikkulainen, Ville; Nilsen, Ola; Fjellvåg, Helmer; Liu, Ming; Dutta, Dhanadeep; Gidley, David; Lanford, William; Ross, Liza; Li, Han; King, Sean W.
• Editors: Kondoh, E.; Baklanov, M.; Bielefeld, J.D.; Jousseaume, V.
• Is Part Of: MRS proceedings. Issue 1791(2015)
• Page Start: 15
• Page End: 20
• Publication Date: 2015
• Subjects: atomic layer deposition, -- dielectric, -- elastic properties; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.519
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low- k ) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young's modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10 -10 A/cm 2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low- k dielectric applications.