Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors. Issue 1792 (18th May 2015)

• Record Type: Journal Article
• Authors: Schrimpf, R. D.; Fleetwood, D. M.; Pantelides, S. T.; Puzyrev, Y.S.; Mukherjee, S.; Reed, R. A.; Speck, J. S.; Mishra, U. K.
• Editors: Herrick, R.; Miyake, H.; Palacios, T.; Shiojima, K.; Ueda, O.; Chen, Y.; Liliental-Weber, Z.; Narayan, J.; Weber, E.R.
• Is Part Of: MRS proceedings. Issue 1792(2015)
• Publication Date: 2015-05-18
• Subjects: devices, -- electrical properties, -- III-V; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.475
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The physical mechanisms responsible for electrically-induced parametric degradation in GaN-based high electron mobility transistors are examined using a combination of experiments, device simulation, and first-principles defect analysis. A relatively simple formulation is developed under the assumption that the hot-electron scattering cross-section is independent of the electron energy. In this case, one can relate the change in defect concentration to the operational characteristics of a device, such as the spatial and energy distribution of electrons (electron temperature), electric field distribution, and electron energy loss to the lattice.