SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices. Issue 1790 (2015)

• Record Type: Journal Article
• Authors: Fleck, Karsten; Böttger, Ulrich; Waser, Rainer; Menzel, Stephan
• Editors: McIntyre, P.; Robertson, J.; Hwang, H.; Frank, M.M.
• Is Part Of: MRS proceedings. Issue 1790(2015)
• Page Start: 7
• Page End: 12
• Publication Date: 2015
• Subjects: kinetics, -- nanostructure, -- memory; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.459
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: In this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10 -8 and 10 4 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.