Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin Films by Photoluminescence. Issue 1771 (7th May 2015)

• Record Type: Journal Article
• Authors: Kawakita, Shirou; Imaizumi, Mitsuru; Ishizuka, Shogo; Shibata, Hajime; Niki, Shigeru; Okuda, Shuichi; Kusawake, Hiroaki
• Editors: Gloeckler, M.; Tiwari, A.N.; Yamada, A.; Yan, Y.; Kim, J.Y.; Miyasaka, T.; Mora-Seró, I.; Zhu, K.; Andersson, M.; Manca, J.V.; Palomares, E.; Vandewal, K.; Li, T.; Mastro, M.; Tao, M.; Wang, Q.
• Is Part Of: MRS proceedings. Issue 1771(2015)
• Publication Date: 2015-05-07
• Subjects: defects, -- radiation effects, -- electron irradiation; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.405
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: CIGS thin films were irradiated with 100 or 250 keV electrons to reveal the radiation defect by analyzing PL measurement. The PL intensity decreased due to non-radiative recombination defects induced by electron irradiation. Furthermore, the intensity 0.8 eV peak of the PL spectrum was observed from CIGS films irradiated with 250 eV electrons and is said to correspond to In-antisite defects in CIGS materials. The defects can usually change into InCu -VCu complex defects combined with VCu, since the formation energy of the complex defect is lower than that of each defect. Cu interstitial defects induced by 250 keV electron irradiation would diffuse to VCu of the complex defect, whereupon the complex defect might become an In-antisite defect due to 250 keV electron irradiation.