Organic/inorganic heterojunction based on conducting polymer and pulse-laser-deposited (PLD) ZnO. Issue 1732 (24th April 2015)

• Record Type: Journal Article
• Authors: Wang, Weining; Gutierrez, Leandro; Nabizadeh, Arya; Sahiner, Mehmet A.
• Editors: Amassian, A.; Berry, J.J.; McLachlan, M.A.; Ratcliff, E.L.
• Is Part Of: MRS proceedings. Issue 1732:(2015)
• Publication Date: 2015-04-24
• Subjects: devices, -- semiconducting, -- polymer; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.350
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Organic/inorganic heterojunctions have been fabricated by spin coating p-type poly (3, 4 ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT:PSS) onto n-type zinc oxide (ZnO) films. The ZnO films were deposited onto indium tin oxide (ITO) coated glass by pulse laser deposition (PLD) technique. The current density-voltage (J-V) characteristics of the PLD-ZnO/PEDOT:PSS junction based on as-deposited PLD-ZnO film shows a good rectifying behavior with a rectification ratio of 156 at ±1 V, indicating the formation of a diode between ZnO and PEDOT:PSS. Using thermionic emission model, the ideality factor (n=2.1) and barrier height (0.66 eV) of the heterojunction were obtained. Those diode parameters are better than those of the chemical vapor deposited ZnO/PEDOT:PSS heterojunction reported elsewhere, indicating that PLD may be a promising technique on fabricating high quality ZnO/polymer heterojunctions.