Indium Tin Oxide Conductive Nanowires Formed by Magnetron Sputtering. Issue 1747 (8th April 2015)

• Record Type: Journal Article
• Authors: Yamamoto, Naoki; Morisawa, Kirihiko
• Editors: Kruis, E.; Maric, R.; Tse, S.; Wegner, K.; Zheng, X.
• Is Part Of: MRS proceedings. Issue 1747:(2015)
• Publication Date: 2015-04-08
• Subjects: nanostructure, -- sputtering, -- oxide; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.339
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Indium tin oxide (ITO) nanowires (NWs) were grown on glass substrates by using ITO sputtering sources (targets) with SnO2 contents in the range of approximately 5.0 to 30.0 wt%. NW growth became apparent at temperatures above 125 °C, and the In, Sn and O contents of the resulting ITO NWs were similar to those of the ITO source. NWs grown from ITO sources containing 5.0 to 12.0 wt% SnO2 had circular or elliptical cross-sections, while those obtained from sources with 12.0 to 30.0 wt% SnO2 exhibited square cross-sections. ITO NWs approximately 2 μm in length were obtained as single crystals with a cubic crystal structure. The resistivity of an ITO NW was measured using four nanoprobes in conjunction with a field emission scanning electron microscope and was found to range from 0.13 to 0.6 μΩ-m, values that were approximately one order of magnitude lower than those of transparent ITO films.