Temperature Dependent Electrical and Dielectrics Properties of Metal-Insulator-Metal Capacitors with Alumina-Silicone Nanolaminate Films. Issue 1675 (2014)

• Record Type: Journal Article
• Authors: Sahoo, Santosh K.; Patel, Rakhi P.; Wolden, Colin A.
• Editors: Craciun, V.; Guilloux-Viry, M.; Jain, M.; Jia, Q.; Kozuka, H.; Kumar, D.; Mathur, S.; Obradors, X.; Singh, K.K.
• Is Part Of: MRS proceedings. Issue 1675:(2014)
• Page Start: 169
• Page End: 176
• Publication Date: 2014
• Subjects: dielectric properties, -- electrical properties, -- plasma-enhanced CVD (PECVD) (deposition); Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.879
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Alumina-silicone hybrid nanolaminate films were synthesized by plasma enhanced chemical vapor deposition (PECVD) process. PECVD allows digital control over nanolaminate construction, and may be performed at low temperature for compatibility with flexible substrates. These materials are being considered as dielectrics for application such as capacitors in thin film transistors and memory devices. Temperature dependent electrical and dielectric properties of the nanolaminate dielectric films in metal-insulator-metal structures are taken in the range of 200- 340 K to better asses their potential applications for different devices. It is observed that the frequency dependent dielectric constant (εr ) and ac conductivity (σac ) increase with the temperature. Both quadratic (α) and linear (β) voltage coefficient of capacitance (VCC) increases as the temperature increases. The temperature co-efficient of capacitance (TCC) decreases from 894 to 374 ppm/K as the Al2 O3 composition increases in the alumina/silicone nanolaminates. Activation energy ( E a ) for hopping conduction mechanism varies from 0.011 eV to 0.008 eV as the alumina composition increases from 50 to 83.3%.