Epitaxial Growth of Ferroelectric Pb(Zr, Ti)O3 Layers on GaAs. Issue 1675 (2014)

• Record Type: Journal Article
• Authors: Meunier, Benjamin; Louahadj, Lamis; Le Bourdais, David; Largeau, Ludovic; Agnus, Guillaume; Lecoeur, Philippe; Pillard, Valérie; Mazet, Lucie; Bachelet, Romain; Regreny, Philippe; Botella, Claude; Grenet, Geneviève; Albertini, David; Dubourdieu, Catherine; Gautier, Brice; Saint-Girons, Guillaume
• Editors: Craciun, V.; Guilloux-Viry, M.; Jain, M.; Jia, Q.; Kozuka, H.; Kumar, D.; Mathur, S.; Obradors, X.; Singh, K.K.
• Is Part Of: MRS proceedings. Issue 1675:(2014)
• Page Start: 93
• Page End: 98
• Publication Date: 2014
• Subjects: epitaxy, -- ferroelectric, -- oxide; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.786
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Ferroelectric epitaxial Pb(Zr, Ti)O3 (PZT) layers were grown by pulsed laser deposition on SrTiO3 /GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3 /GaAs is abrupt at the atomic scale thanks to surface Ti pre-treatment. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.