Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide. (14th September 2016)

• Record Type: Journal Article
• Authors: Nomoto, Keita; Gutsch, Sebastian; Ceguerra, Anna V.; Breen, Andrew; Sugimoto, Hiroshi; Fujii, Minoru; Perez-Wurfl, Ivan; Ringer, Simon P.; Conibeer, Gavin
• Is Part Of: MRS communications. Volume 6:Number 3(2016:Sep.)
• Page Start: 283
• Page End: 288
• Publication Date: 2016-09-14
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1557/mrc.2016.37
• Languages: English
• ISSNs: 2159-6859

Abstract

Abstract: Abstract : We analyze phosphorus (P)- and boron (B)-doped silicon nanocrystals (Si NCs) with various compositions of silicon-rich oxide using atom probe tomography. By creating Si iso-concentration surfaces, it is confirmed that there are two types of Si NC networks depending on the amount of excess Si. A proximity histogram shows that P prefers to locate inside the Si NCs, whereas B is more likely to reside outside the Si NCs. We discuss the difference in a preferential location between P and B by a segregation coefficient.