Tunable Electrical Performance of Few‐Layered Black Phosphorus by Strain. Issue 38 (22nd August 2016)

• Record Type: Journal Article
• Authors: Wu, Hongrong; Liu, Xiaofei; Yin, Jun; Zhou, Jianxin; Guo, Wanlin
• Is Part Of: Small. Volume 12:Issue 38(2016)
• Page Start: 5276
• Page End: 5280
• Publication Date: 2016-08-22
• Subjects: atomic force microscopy -- bandgap modulation -- black phosphorus -- Schottky barrier -- strain engineering; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201601267
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : Strain engineering shows promising applications in low‐dimensional materials. It is demonstrated that the bandgap of few‐layered black phosphorus can be effectively reduced by out‐of‐plane compressive strain, resulting in a significant modulation of the vertical electrical performance of black phosphorus and even inducing a nonlinear current–voltage curve to linear current–voltage curve transition.