Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates. (13th April 2016)

• Record Type: Journal Article
• Authors: Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol; Song, Taewon; Kim, Seong Heon; Yun, Dong‐Jin; Lee, Hyung Ik; Kim, KiHong; Park, Gyeong Su; Oh, Jong Soo; Kwak, Dong Wook; Lee, DongWha; Cho, Hoon Young; Tahi, Dahlang; Kang, Hee Jae; Choi, Byoung‐Deog
• Is Part Of: Surface and interface analysis. Volume 48:Number 10(2016)
• Page Start: 1062
• Page End: 1065
• Publication Date: 2016-04-13
• Subjects: defect states -- GIZO -- REELS -- TSEE -- PICTS -- XPS; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6024
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract: The band alignment and defect states of GaInZnO thin films grown on SiO2 /Si via radio frequency (RF) magnetron sputtering were investigated by using X‐ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo‐electron emission and photo‐induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo‐induced current transient spectroscopy and thermally stimulated exo‐electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field‐effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect. Copyright © 2016 John Wiley & Sons, Ltd.