Observation of compositional domains within individual copper indium sulfide quantum dots. Issue 36 (28th July 2016)

• Record Type: Journal Article
• Authors: Harvie, Andrew J.; Booth, Matthew; Chantry, Ruth L.; Hondow, Nicole; Kepaptsoglou, Demie M.; Ramasse, Quentin M.; Evans, Stephen D.; Critchley, Kevin
• Is Part Of: Nanoscale. Volume 8:Issue 36(2016)
• Page Start: 16157
• Page End: 16161
• Publication Date: 2016-07-28
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c6nr03269a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : We report observation of highly-segregated compositional domains within CuInS2 quantum dots, showing the origin of their emission-mediating InCu defect. Abstract : The origin of photoluminescence in copper indium sulfide (CIS) quantum dots (Qdots) has previously been ascribed to a donor–acceptor pair (DAP) recombination, with a crystal lattice defect implicated as the origin of the donor state. In this study, electron energy-loss spectroscopy (EELS) was used to observe defect-rich compositional domains within individual CIS Qdots, supporting a model of defect-state-mediated photoluminescence for these particles, and identifying them as an ideal model system for future study of lattice defects on Qdot properties.