The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content. Issue 8 (10th March 2016)

• Record Type: Journal Article
• Authors: Li, X.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Liang, F.; Zhang, L. Q.; Liu, J. P.; Yang, H.
• Is Part Of: Physica status solidi. Volume 213:Issue 8(2016:Aug.)
• Page Start: 2223
• Page End: 2228
• Publication Date: 2016-03-10
• Subjects: electron blocking layers -- GaN -- indium content -- laser diodes -- numerical simulation -- quantum wells; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600013
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : The effects of Al composition in p‐type AlGaN electron blocking layer (EBL) on electron leakage and device performance in InGaN‐based quantum well (QW) laser diodes (LDs) are numerically investigated in connection with the depth of QWs. It is found that the effectiveness of EBL in blocking electron leakage depends much on Al content in EBL and In content in InGaN QWs. It is effective for low‐In‐content InGaN QW LDs to add moderate Al in AlGaN EBL, while it is hardly helpful and even harmful for high‐In‐content InGaN QW LDs to increase Al content. In addition, it is found that too much Al in EBL is unfavorable for all LDs due to the downward conduction band‐bending in the last quantum barrier (LQB) layer.