Modification of internal barrier in hydrogen‐terminated heavily phosphorus‐doped diamond for field emission. Issue 8 (19th June 2016)

• Record Type: Journal Article
• Authors: Masuzawa, Tomoaki; Kudo, Yuki; Mimura, Hidenori; Neo, Yoichiro; Okano, Ken; Yamada, Takatoshi
• Is Part Of: Physica status solidi. Volume 213:Issue 8(2016:Aug.)
• Page Start: 2063
• Page End: 2068
• Publication Date: 2016-06-19
• Subjects: band bending -- field emission -- hydrogen -- internal barriers -- phosphorus‐doped diamond; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600099
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In this article, a field‐induced electron emission from hydrogen (H)‐terminated surface of heavily phosphorus (P)‐doped diamond is discussed based on the barrier lowering model. Ultraviolet photoelectron spectroscopy suggested that an upward band bending of 1.45 eV existed at the surface of the diamond. A field emission characteristic as a function of the distance between an anode and diamond was measured to evaluate an average electric field in the vacuum. The barrier lowering model was introduced to estimate the reduction of the internal barrier due to the electric field at the diamond surface. The barrier lowering effect was confirmed from energies of emitted electrons, measured by combined ultraviolet photoelectron spectroscopy/field‐induced electron spectroscopy (UPS/FES). As a result, it was shown that the electron emission from n‐type diamond having NEA surface could be modulated by controlling a local electric field.