Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Si-based Solar Cells. Issue 14 (2016)

• Record Type: Journal Article
• Authors: Litvinov, Vladimir G.; Vishnyakov, Nikolay V.; Gudzev, Valery V.; Rybin, Nikolay B.; Kusakin, Dmitry S.; Ermachikhin, Alexander V.; Karabanov, Sergey M.; Vikhrov, Sergey P.; Karabanov, Andrey S.; Slivkin, Evgeny V.
• Is Part Of: MRS advances. Volume 1:Issue 14(2016)
• Page Start: 911
• Page End: 916
• Publication Date: 2016
• Subjects: deep level transient spectroscopy (DLTS), -- defects, -- photovoltaic; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.42
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: The influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.