Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector. Issue 16 (2016)

• Record Type: Journal Article
• Authors: Liu, Z.C.; Li, F.N.; Wang, W.; Zhang, J.W.; Lin, F.; Wang, H.X.
• Is Part Of: MRS advances. Volume 1:Issue 16(2016)
• Page Start: 1099
• Page End: 1104
• Publication Date: 2016
• Subjects: optoelectronic, -- devices, -- diamond; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.84
• Languages: English
• ISSNs: 2059-8521

Abstract

Abstract: The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-high-temperature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.