Metallic β-Nb2N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates. Issue 2 (2016)

• Record Type: Journal Article
• Authors: Katzer, D. Scott; Nepal, Neeraj; Meyer, David J.; Downey, Brian P.; Wheeler, Virginia; Storm, David F.; Hardy, Matthew T.
• Is Part Of: MRS advances. Volume 1:Issue 2(2016)
• Page Start: 127
• Page End: 132
• Publication Date: 2016
• Subjects: molecular beam epitaxy (MBE), -- Nb, -- nitride; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.27
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: RF-plasma MBE was used to epitaxially grow 4 – 100-nm-thick metallic β-Nb2 N thin films on hexagonal SiC substrates. When the N/Nb flux ratios are greater than one, the most critical parameter for high-quality β-Nb2 N is the substrate temperature. The X-ray diffraction (XRD) of films grown between 775 °C and 850 °C demonstrates pure β-Nb2 N phase formation which was also confirmed by X-ray photoelectron spectroscopy and transmission electron microscopy measurements. Using the (0002) and (21 $\bar 3$ 1) XRD peaks of a β-Nb2 N film grown at 850 °C reveals a 0.68% lattice mismatch to the 6H-SiC substrate. This suggests that β-Nb2 N can be used for high-quality metal/semiconductor heterostructures that cannot be fabricated at present.