High aspect ratio germanium nanowires obtained by dry etching. Issue 13 (2016)

• Record Type: Journal Article
• Authors: Guilloy, Kevin; Pauc, Nicolas; Gassenq, Alban; Calvo, Vincent
• Is Part Of: MRS advances. Volume 1:Issue 13(2016)
• Page Start: 875
• Page End: 880
• Publication Date: 2016
• Subjects: reactive ion etching, -- nanostructure, -- Ge; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.159
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: We present here a reactive ion etching recipe to fabricate germanium nanowires. We used a combination of Cl2, N2 and O2 and studied the influence of both the gas pressure and the O2 mass flow on the morphology of the nanowires. 5 µm long nanowires with an aspect ratio of 20 are demonstrated with smooth surfaces and a tapering below 20 nm/µm. We also show that both gold and aluminum can be used as hard mask; the latter achieving a selectivity with germanium above 100.