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Zheng 郑, Y. et al. (n.d.). Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells*Supported by the National Natural Science Foundation of China under Grant Nos 10675023, 11075018 and 11375028, and the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20120003110011.. Chinese physics letters. p. . [Online].