High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure. Issue 36 (6th July 2016)

• Record Type: Journal Article
• Authors: Rong, Xin; Wang, Xinqiang; Ivanov, Sergey V.; Jiang, Xinhe; Chen, Guang; Wang, Ping; Wang, Weiying; He, Chenguang; Wang, Tao; Schulz, Tobias; Albrecht, Martin; Jmerik, Valentin N.; Toropov, Alexey A.; Ratnikov, Viacheslav V.; Kozlovsky, Vladimir I.; Martovitsky, Victor P.; Jin, Peng; Xu, Fujun; Yang, Xuelin; Qin, Zhixin; Ge, Weikun; Shi, Junjie; Shen, Bo
• Is Part Of: Advanced materials. Volume 28:Issue 36(2016)
• Page Start: 7978
• Page End: 7983
• Publication Date: 2016-07-06
• Subjects: e‐beam pumping -- high output power -- molecular beam epitaxy -- mid‐UV light sources -- quasi‐2D GaN; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201600990
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Quasi‐2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high‐output‐power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron‐beam excitation. This device is promising and competitive in non‐line‐of‐sight communications or the sterilization field.