Effect of Oxygen Vacancy on Electrical Property of Acceptor Doped BaTiO3–Na0.5Bi0.5TiO3–Nb2O5 X8R Systems. Issue 9 (6th June 2016)

• Record Type: Journal Article
• Authors: Sun, Yue; Liu, Hanxing; Hao, Hua; Zhang, Shujun
• Editors: Damjanovic, D.
• Is Part Of: Journal of the American Ceramic Society. Volume 99:Issue 9(2016)
• Page Start: 3067
• Page End: 3073
• Publication Date: 2016-06-06
• Subjects: multilayer capacitor -- barium titanate -- dielectric materials/properties; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.14336
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract : In this study, we reported a new BaTiO3 –Na0.5 Bi0.5 TiO3 –Nb2 O5 –Mn2 O3 /Fe2 O3 /Co3 O4 /In2 O3 X8R system with high dielectric constant (>2100) at room temperature. The impacts of oxygen vacancy ( V O ¨ ) on dielectric, electrical conductivity, and ferroelectric properties were systematically studied. The Curie point is largely depended on the V O ¨ concentration, which can be confirmed by the dielectric behavior and A1g octahedral breathing modes in Raman spectrum. In addition, the activation energy of V O ¨ diffusion is greatly reduced with the increase in V O ¨ concentration. It was found that the remnant polarization and coercive field were both decreased with increasing V O ¨ concentration, due to the facilitated defect dipoles reorientation and domain switching.