Cite
HARVARD Citation
Li, X. et al. (2016). Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells. Superlattices and microstructures. pp. 186-192. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Li, X. et al. (2016). Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells. Superlattices and microstructures. pp. 186-192. [Online].