Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers. (12th May 2016)

• Record Type: Journal Article
• Authors: Tsuchiya, Tomoki; Kubota, Takahide; Sugiyama, Tomoko; Huminiuc, Teodor; Hirohata, Atsufumi; Takanashi, Koki
• Is Part Of: Journal of physics. Volume 49:Number 23(2016)
• Publication Date: 2016-05-12
• Subjects: Heusler alloys -- exchange bias -- antiferromagnetic material -- thin films; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/23/235001
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Ni2 MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2 MnAl thin films were B 2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B 2-Ni2 MnAl. The magnetization curves of Ni2 MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field H ex was 55 Oe corresponding to the exchange coupling energy J k of 0.03 erg cm −2 .