Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures. (6th May 2016)

• Record Type: Journal Article
• Authors: Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro
• Is Part Of: Journal of physics. Volume 49:Number 23(2016)
• Publication Date: 2016-05-06
• Subjects: deep-ultraviolet -- light-emitting diodes -- optoelectronics -- optical devices; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/23/235101
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n -AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p -electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p -electrode LED when compared with an LED with a conventional cross-bar p -electrode pattern.