Power signatures of electric field and thermal switching regimes in memristive SET transitions. (12th May 2016)

• Record Type: Journal Article
• Authors: Mickel, Patrick R; Hughart, David; Lohn, Andrew J; Gao, Xujiao; Mamaluy, Denis; Marinella, Matthew J
• Is Part Of: Journal of physics. Volume 49:Number 24(2016)
• Publication Date: 2016-05-12
• Subjects: RRAM -- memristor -- conducting filament -- switching mechanisms -- resistive switching; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/24/245103
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We present a study of the 'snap-back' regime of resistive switching hysteresis in bipolar TaO x memristors, identifying power signatures in the electronic transport. Using a simple model based on the thermal and electric field acceleration of ionic mobilities, we provide evidence that the 'snap-back' transition represents a crossover from a coupled thermal and electric-field regime to a primarily thermal regime, and is dictated by the reconnection of a ruptured conducting filament. We discuss how these power signatures can be used to limit filament radius growth, which is important for operational properties such as power, speed, and retention.