Cite
HARVARD Citation
Liu, L. et al. (2016). Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor. Physica status solidi. 10 (9), pp. 703-707. [Online].
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Liu, L. et al. (2016). Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor. Physica status solidi. 10 (9), pp. 703-707. [Online].